US 11,942,168 B2
EFuse structure and method
Meng-Sheng Chang, Hsinchu (TW); and Yao-Jen Yang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 3, 2023, as Appl. No. 18/295,148.
Application 18/295,148 is a continuation of application No. 17/541,245, filed on Dec. 2, 2021, granted, now 11,621,046.
Application 17/541,245 is a continuation of application No. 17/111,055, filed on Dec. 3, 2020, granted, now 11,211,134, issued on Dec. 28, 2021.
Application 17/111,055 is a continuation of application No. 16/419,648, filed on May 22, 2019, granted, now 10,878,929, issued on Dec. 29, 2020.
Claims priority of provisional application 62/719,955, filed on Aug. 20, 2018.
Prior Publication US 2023/0245707 A1, Aug. 3, 2023
Int. Cl. G11C 17/16 (2006.01); G06F 30/392 (2020.01); G11C 17/18 (2006.01); H01L 23/525 (2006.01); H01L 27/02 (2006.01); H10B 20/20 (2023.01); G06F 119/18 (2020.01)
CPC G11C 17/16 (2013.01) [G06F 30/392 (2020.01); G11C 17/18 (2013.01); H01L 23/5256 (2013.01); H01L 27/0207 (2013.01); H10B 20/20 (2023.02); G06F 2119/18 (2020.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure comprising:
a first active area comprising a first plurality of fin structures extending in a first direction;
a second active area comprising a second plurality of fin structures extending in the first direction;
an electrical fuse (eFuse) conductive segment extending in the first direction between the first and second active areas and electrically connected to each of the first and second pluralities of fin structures;
a first plurality of gate structures extending over the first active area in a second direction perpendicular to the first direction;
a second plurality of gate structures extending over the second active area in the second direction;
a first signal line extending in the first direction adjacent to the first active area and electrically connected to the first plurality of gate structures; and
a second signal line extending in the first direction adjacent to the second active area and electrically connected to the second plurality of gate structures.