US 11,942,146 B2
Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods
Win-San Khwa, Hsinchu (TW); Kerem Akarvardar, Hsinchu (TW); and Yu-Sheng Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Feb. 13, 2023, as Appl. No. 18/109,184.
Application 18/109,184 is a continuation of application No. 17/151,538, filed on Jan. 18, 2021, granted, now 11,581,039.
Prior Publication US 2023/0197150 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/0004 (2013.01) [G11C 13/004 (2013.01); G11C 13/0061 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0083 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for configuring a phase-change random-access memory (PCRAM) cell, comprising:
determining a type of a configuration change command associated with the PCRAM cell, wherein the configuration change command is generated based at least in part on an error tolerance for a neural network layer;
selecting, based at least in part on the determined type of the configuration change command, a RESET program condition from a plurality of stored RESET program conditions; and
programming the PCRAM cell using the selected RESET program condition.