US 11,942,128 B2
Magnetic memory device
Whankyun Kim, Seoul (KR); Jeong-Heon Park, Hwaseong-si (KR); Heeju Shin, Seoul (KR); Youngjun Cho, Hwaseong-si (KR); Joonmyoung Lee, Gwacheon-si (KR); and Junho Jeong, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 14, 2022, as Appl. No. 17/576,047.
Claims priority of application No. 10-2021-0068636 (KR), filed on May 27, 2021.
Prior Publication US 2022/0383923 A1, Dec. 1, 2022
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A magnetic memory device, comprising:
a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate;
a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern;
a top electrode on the free magnetic pattern; and
a capping pattern between the free magnetic pattern and the top electrode,
wherein the capping pattern includes:
a lower capping pattern;
an upper capping pattern between the lower capping pattern and the top electrode;
a first non-magnetic pattern between the lower capping pattern and the upper capping pattern; and
a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern,
each of the lower capping pattern and the upper capping pattern including a non-magnetic metal, and
the first non-magnetic pattern and the second non-magnetic pattern including different metals from each other, and
wherein the first non-magnetic pattern includes a first metal, the second non-magnetic pattern includes a second metal different from the first metal, and each of the first metal and the second metal has an oxidation potential greater than an oxidation potential of the non-magnetic metal included in each of the lower capping pattern and the upper capping pattern.