|
1. A storage device comprising a controller configured to control a non-volatile memory device including a plurality of blocks, the controller comprising a secure erase control logic configured to control a secure erase operation on the plurality of blocks and configured to perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks, such that the secure erase operation on the first block is skipped based on a result of determining at least one of a secure erase state and/or a deterioration state of the first block, wherein the controller is further configured to determine the deterioration state according to an amount of downward shift of a threshold voltage distribution of memory cells connected to at least one first word line of the first block, and wherein the controller is further configured to change an operating condition of the secure erase operation on the first block when the first block is determined to have a deteriorated state.
|
