US 11,941,258 B2
Zoned memory device recovery after a key-value store failure
Pierre Labat, Campbell, CA (US); Nabeel Meeramohideen Mohamed, Round Rock, TX (US); and Steven Moyer, Round Rock, TX (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 21, 2023, as Appl. No. 18/111,964.
Application 18/111,964 is a continuation of application No. 17/314,657, filed on May 7, 2021, granted, now 11,614,870.
Prior Publication US 2023/0195330 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0631 (2013.01); G06F 3/0632 (2013.01); G06F 3/0644 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
detecting a failure of a key-value store;
identifying a non-filled zone of the memory device resulting from the failure, wherein the non-filled zone stores, in the key-value store, at least one of: an uncommitted key block or an uncommitted value block; and
recovering the non-filled zone to obtain a recovered zone.