US 11,940,730 B2
Photoresist compositions and pattern formation methods
Mitsuru Haga, Niigata (JP); and Mingqi Li, Shrewsbury, MA (US)
Assigned to ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US)
Filed by Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed on Dec. 29, 2021, as Appl. No. 17/565,019.
Claims priority of provisional application 63/132,686, filed on Dec. 31, 2020.
Prior Publication US 2022/0229366 A1, Jul. 21, 2022
Int. Cl. G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01)
CPC G03F 7/0392 (2013.01) [G03F 7/0045 (2013.01); G03F 7/20 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A pattern formation method, comprising:
(a) applying a layer of a photoresist composition over a substrate,
(b) pattern-wise exposing the photoresist composition layer to i-line radiation; and
(c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the layer of the photoresist composition is coated in a single application by spin-coating to a thickness of 1 to 50 micrometers;
wherein the photoresist composition comprises:
a non-ionic photoacid generator;
a solvent;
a first polymer comprising first polymerized units of formula (1), second polymerized units of formula (2); and third polymerized units of formula (3):

OG Complex Work Unit Chemistry
wherein a is an integer from 1 to 5 and Z3 is a hydrogen, Z and R5 are independently selected from a hydrogen atom, C1-C4 alkyl, C1-C4 fluoroalkyl, or cyano; Zi is a non-hydrogen substituent comprising an acid-labile group, the cleavage of which forms a carboxylic acid on the polymer; L is a substituted or unsubstituted C1-C4 alkylene; Ar1 is a substituted or unsubstituted anthracene group; wherein the first polymer is present in the photoresist composition in an amount of from 0.1 to 10 wt %, based on total solids of the photoresist composition; and
a second polymer comprising first polymerized units of formula (4)

OG Complex Work Unit Chemistry
wherein b is an integer from 1 to 5 and Z4 is a hydrogen or an alkyl group having 1 to 5 carbon atoms; and second polymerized units of a monomer comprising an acid-labile group; and wherein the second polymer is free of polymerized units of formula (3): present in the photoresist composition in an amount of 10 to 99 wt %, based on total solids of the photoresist composition.