US 11,940,678 B2
Stressed silicon modulator
Mengyuan Huang, Cupertino, CA (US); David Patel, San Jose, CA (US); Kejia Li, San Jose, CA (US); Wei Qian, Walnut, CA (US); and Ansheng Liu, Cupertino, CA (US)
Assigned to Intel Corporation, Santa, Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 22, 2020, as Appl. No. 17/131,470.
Claims priority of provisional application 63/051,791, filed on Jul. 14, 2020.
Prior Publication US 2022/0019098 A1, Jan. 20, 2022
Int. Cl. G02F 1/025 (2006.01)
CPC G02F 1/025 (2013.01) [G02F 2201/063 (2013.01); G02F 2202/105 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optical modulator apparatus, comprising:
a first dielectric layer over a substrate;
a rib waveguide comprising a PN junction on the first dielectric layer, the PN junction of the rib waveguide comprising a P-doped region adjacent an N-doped region;
a first slab region adjacent to the P-doped region and a second slab region adjacent to the N-doped region;
a second dielectric layer over the rib waveguide; and
a stressor layer comprising a metal, wherein the second dielectric layer is between the stressor layer and the PN junction, and wherein the stressor layer extends laterally above the first slab region and the second slab region.