US 11,940,662 B2
Semiconductor structure and method for forming the same
Jen-Yuan Chang, Hsinchu (TW); and Chia-Ping Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Oct. 27, 2020, as Appl. No. 17/081,763.
Prior Publication US 2022/0128780 A1, Apr. 28, 2022
Int. Cl. G02B 6/42 (2006.01); G02B 6/43 (2006.01)
CPC G02B 6/4277 (2013.01) [G02B 6/4206 (2013.01); G02B 6/43 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a die;
a dielectric layer surrounding the die;
a photoelectric device disposed adjacent to the die and surrounded by the dielectric layer;
a redistribution layer disposed over the die, the dielectric layer and the photoelectric device;
a first opening extending through the redistribution layer and configured to receive a first light-conducting member; and
a metallic shield extending at least partially through the redistribution layer and surrounding the first opening.
 
13. A semiconductor structure, comprising:
a die;
a dielectric layer surrounding the die;
a redistribution layer over the dielectric layer;
a photoelectric device disposed adjacent to the die and between the dielectric layer and the redistribution layer;
a light-conducting member extending through the redistribution layer and optically coupled to the photoelectric device; and
a metallic shield extending at least partially through the redistribution layer and surrounding the light-conducting member.
 
18. A semiconductor structure, comprising:
a die;
a photoelectric device disposed adjacent to the die;
a dielectric layer surrounding the die and the photoelectric device;
a redistribution layer over the die, the photoelectric device and the dielectric layer;
a light-conducting member extending through the redistribution layer and optically coupled to the photoelectric device; and
a metallic shield extending at least partially through the redistribution layer and surrounding the light-conducting member, wherein at least a portion of the redistribution layer is disposed between the light-conducting member and the metallic shield.