US 11,940,391 B2
Defect inspection apparatus, method for inspecting defect, and method for manufacturing photomask blank
Ryusei Terashima, Niigata (JP); Takumi Yoshino, Niigata (JP); and Tsuneo Terasawa, Niigata (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Apr. 1, 2022, as Appl. No. 17/712,031.
Claims priority of application No. 2021-063981 (JP), filed on Apr. 5, 2021.
Prior Publication US 2022/0317061 A1, Oct. 6, 2022
Int. Cl. G01N 21/95 (2006.01); G01N 21/88 (2006.01); G01N 21/956 (2006.01); H01L 21/66 (2006.01)
CPC G01N 21/9501 (2013.01) [G01N 21/8806 (2013.01); G01N 21/95607 (2013.01); H01L 22/12 (2013.01); G01N 2021/95615 (2013.01); G01N 2021/95676 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A defect inspection apparatus comprising:
a defect detection unit configured to acquire first defect information of a substrate; and
a comparative information acquisition unit configured to acquire a result of comparison between predetermined defect information stored in a storage unit and the first defect information, wherein
the substrate comprises multiple layers, and
wherein the substrate further comprises an optical thin film having a thickness of 10 nm or less as an outermost surface layer, and
wherein the comparative information acquisition unit is configured to acquire positional information on a defect where a part of the optical thin film is removed.