US 11,940,337 B2
Pressure sensing device, pressure sensing method and electronic terminal with compact structure and high sensitivity
Hao Li, Guangdong (CN); and Xuepeng Lin, Guangdong (CN)
Assigned to SHENZHEN NEW DEGREE TECHNOLOGY CO., LTD., Shenzhen (CN)
Appl. No. 17/416,384
Filed by SHENZHEN NEW DEGREE TECHNOLOGY CO., LTD., Guangdong (CN)
PCT Filed Dec. 20, 2018, PCT No. PCT/CN2018/122314
§ 371(c)(1), (2) Date Jun. 18, 2021,
PCT Pub. No. WO2020/124477, PCT Pub. Date Jun. 25, 2020.
Prior Publication US 2022/0057277 A1, Feb. 24, 2022
Int. Cl. G01L 1/18 (2006.01)
CPC G01L 1/18 (2013.01) 19 Claims
OG exemplary drawing
 
1. A pressure sensing device, comprising:
a substrate configured for attachment to an object being tested, the substrate being shaped as a long strip having two outer edges and two inner edges located inside the two outer edges, an area being defined between the two inner edges, and
a pressure sensor provided on the substrate in an arrangement direction;
wherein the pressure sensor comprises:
at least one thin-film piezoresistive sensor disposed on the substrate, the at least one thin-film piezoresistive sensor haivng sides and four corners, and
first, second, third and fourth signal wires respectively led out from the four corresponding corners of the thin-film piezoresistive sensor, wherein a side of the thin-film piezoresistive sensor is attached to the substrate, and resistivity distribution of the thin-film piezoresistive sensor changes with deformation of the substrate when the substrate deforms, wherein the first and second signal wires comprise one power wire and one ground wire respectively, and the third and fourth signal wires opposing the first and second signal wires comprise differential signal wires indicating, a pressure on the object being tested by a voltage drop therebetween;
wherein the thin-film piezoresistive sensor, the first, second, third and fourth signal wires and bonding pads terminating the first, second, third and fourth signal wires are disposed within the area defined between the two inner edges of the substate; and
wherein a side of the thin-film piezoresistive sensor is parallel to the arrangement direction of the pressure sensor and the first, second, third and fourth signal wires each longitudinally extend parallel to the arrangement direction of the pressure sensor.