US 11,939,674 B2
Methods to reduce material surface roughness
Yi Yang, San Jose, CA (US); Krishna Nittala, San Jose, CA (US); Karthik Janakiraman, San Jose, CA (US); Aykut Aydin, Sunnyvale, CA (US); and Diwakar Kedlaya, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 2, 2023, as Appl. No. 18/116,609.
Application 18/116,609 is a continuation of application No. 17/087,346, filed on Nov. 2, 2020, granted, now 11,618,949.
Claims priority of provisional application 62/933,012, filed on Nov. 8, 2019.
Prior Publication US 2023/0203652 A1, Jun. 29, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/30 (2006.01); C23C 16/38 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/45536 (2013.01) [C23C 16/303 (2013.01); C23C 16/38 (2013.01); H01J 37/32009 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing materials with reduced surface roughness, comprising:
delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber;
providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1;
forming a plasma of all precursors within the processing region of a semiconductor processing chamber; and
depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.