US 11,939,669 B2
Coating method for continuous preparation of diamond thin film with HFCVD device
Lusheng Liu, Shenyang (CN); Xin Jiang, Shenyang (CN); and Nan Huang, Shenyang (CN)
Appl. No. 17/627,754
Filed by Institute of Metal Research Chinese Academy of Sciences, Shenyang (CN)
PCT Filed Nov. 26, 2019, PCT No. PCT/CN2019/120849
§ 371(c)(1), (2) Date Jan. 17, 2022,
PCT Pub. No. WO2021/008057, PCT Pub. Date Jan. 21, 2021.
Claims priority of application No. 201910652012.5 (CN), filed on Jul. 18, 2019.
Prior Publication US 2022/0316053 A1, Oct. 6, 2022
Int. Cl. C23C 16/27 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); C23C 16/54 (2006.01)
CPC C23C 16/271 (2013.01) [C23C 16/4587 (2013.01); C23C 16/52 (2013.01); C23C 16/54 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A coating method for continuous preparation of a diamond thin film by using a HFCVD device, which comprises a left chamber gate valve, a left thin film growth chamber, a left chamber water-cooled electrode, two left chamber hot filament racks, two or more left chamber hot filaments, a left chamber drive roller, a left chamber support frame, a sample access chamber support frame, a right chamber support frame, a right chamber drive roller, two or more right chamber hot filaments, two right chamber hot filament racks, a right chamber water-cooled electrode, a right thin film growth chamber, a right chamber gate valve, a sample loading chamber drive roller, a sample access chamber, a substrate, a substrate platform, a substrate trolley, comprising the steps of:
Step (1): closing said left chamber gate valve and said right chamber gate valve, controlling said left thin film growth chamber and said right thin film growth chamber to reach a predetermined pressure within 20 Pa by vacuuming through a vacuuming system of said HFCVD device, heating up said left chamber hot filaments and said right chamber hot filaments in a range between 2000° C. and 3000° C., and activating a gas system of said HFCVD device to fill reaction gas to said left thin film growth chamber and said right thin film growth chamber respectively so as to carbonize said left chamber hot filaments and said right chamber hot filaments;
step (2): disposing said substrate, which is pre-cleaned, on said substrate platform, place said substrate trolley along with said substrate and said substrate platform in said sample access chamber, and vacuuming said sample access chamber at a predetermined pressure within 20 Pa;
step (3): opening said left chamber gate valve;
step (4): actuating said sample loading chamber drive roller and said left chamber drive roller to move said substrate trolley to said left thin film growth chamber;
step (5): closing said left chamber gate valve and start to grow said diamond thin film on said substrate;
step (6): disposing said substrate, which is pre-cleaned, on said substrate platform, place said substrate trolley along with said substrate and said substrate platform in said sample access chamber, and vacuuming said sample access chamber at a predetermined pressure within 20 Pa to define a vacuum condition;
step (7): opening said right chamber gate valve;
step (8): actuating said sample loading chamber drive roller and said right chamber drive roller to move said substrate trolley to said right thin film growth chamber;
step (9): closing said right chamber gate valve and starting to grow said diamond thin film on said substrate;
step (10): after said growth of said diamond thin film on said substrate in said left thin film growth chamber is completed, opening said left chamber gate valve and actuating said left chamber drive roller and said sample loading chamber drive roller to move said substrate trolley to said sample access chamber;
step (11): closing said left chamber gate valve;
step (12): dropping a temperature of said substrate to room temperature while maintaining said sample access chamber in said vacuum condition;
step (13): releasing said vacuum condition of said sample access chamber and taking out said substrate with said diamond thin film being grown thereon;
step (14): disposing said substrate, which is pre-cleaned, on said substrate platform, placing said substrate trolley along with said substrate and said substrate platform in said sample access chamber, and vacuuming said sample access chamber at a predetermined pressure within 20 Pa to define said vacuum condition;
step (15): opening said left chamber gate valve;
step (16): actuating said sample loading chamber drive roller and said left chamber drive roller to move said substrate trolley to said left thin film growth chamber;
step (17): closing said left chamber gate valve;
step (18): after said growth of said diamond thin film on said substrate in said right thin film growth chamber is completed, opening said right chamber gate valve;
step (19): actuating said right chamber drive roller and said sample loading chamber drive roller to move said substrate trolley to said sample access chamber;
step (20): closing said right chamber gate valve;
step (21): dropping said temperature of said substrate to room temperature while maintaining said sample access chamber in said vacuum condition.