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1. An apparatus for processing a substrate, comprising: a process chamber with a processing volume and a substrate support including a pedestal to support the substrate, wherein the pedestal is a ceramic-based material; a remote plasma source (RPS) fluidly coupled to a top of the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate via a plenum and showerhead positioned at the top of the process chamber; a first gas delivery system fluidly connected directly to the processing volume via a sidewall of the process chamber and configured to provide at least one first chemical into the processing volume to produce a self-assembled monolayer (SAM) on the surface of the substrate; a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate; a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate; and a controller configured to generate radicals or ionized gas mixture with radicals with the RPS to remove residue or oxides from the surface of the substrate and then to form a blocking layer on a metal contact with the self-assembled monolayer on the surf ace of the substrate by delivering the at least one first chemical into the processing volume from the first gas delivery system.
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