US 11,939,664 B2
System and method for performing semiconductor processes with coated bell jar
Meng-Chun Hsieh, Hsinchu (TW); Tsung-Yu Tsai, Hsinchu (TW); Hsing-Yuan Huang, Hsinchu (TW); Chih-Chang Wu, Hsinchu (TW); Szu-Hua Wu, Hsinchu (TW); and Chin-Szu Lee, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,147.
Prior Publication US 2023/0062902 A1, Mar. 2, 2023
Int. Cl. C23C 14/34 (2006.01); C23C 14/50 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01)
CPC C23C 14/50 (2013.01) [C23C 14/34 (2013.01); H01L 21/67748 (2013.01); H01L 21/68707 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
supporting a substrate in a semiconductor process chamber;
placing, over the substrate, a first bell jar having a zirconium coating on an interior surface;
depositing a first metal on the substrate in the presence of the first bell jar;
depositing a second metal on the substrate in the presence of the first bell jar;
placing, over the substrate, a second bell jar having an aluminum coating on an interior surface; and
depositing a dielectric layer over the second metal in the presence of the second bell jar.