US 11,939,505 B2
Silicon nitride film etching composition and etching method using the same
Dong Hyun Kim, Yongin-si (KR); Hyeon Woo Park, Yongin-si (KR); Sung Jun Hong, Yongin-si (KR); Myung Ho Lee, Hwaseong-si (KR); Myung Geun Song, Yongin-si (KR); Hoon Sik Kim, Yongin-si (KR); Jae Jung Ko, Seoul (KR); Myong Euy Lee, Yongin-si (KR); and Jun Hyeok Hwang, Seoul (KR)
Assigned to ENF Technology Co., Ltd., Yongin-Si (KR)
Filed by ENF TECHNOLOGY CO., LTD., Yongin-si (KR)
Filed on Aug. 30, 2021, as Appl. No. 17/446,414.
Claims priority of application No. 10-2020-0121551 (KR), filed on Sep. 21, 2020.
Prior Publication US 2022/0089952 A1, Mar. 24, 2022
Int. Cl. C09K 13/06 (2006.01); C23F 1/02 (2006.01); C23F 1/44 (2006.01); H01L 21/3213 (2006.01)
CPC C09K 13/06 (2013.01) [C23F 1/02 (2013.01); C23F 1/44 (2013.01); H01L 21/32134 (2013.01)] 14 Claims
 
1. A silicon nitride film etching composition comprising: a phosphoric acid, a quaternary ammonium silicate, a silicon compound represented by the following Chemical Formula 1, and a residual amount of water:

OG Complex Work Unit Chemistry
wherein
R1 is C1-20 aminoalkyl and —CH2— of the alkyl may be replaced with —NR′— or —O— in which R′ is hydrogen or C1-7 alkyl;
R2 to R4 are independently of one another hydrogen, a halogen, amino, cyano, hydroxy, C1-20 alkoxy, C1-20 alkyl, C1-20 aminoalkyl, or

OG Complex Work Unit Chemistry
 in which R11 to R14 are independently of one another hydrogen, C1-20 alkyl, or C1-20 hydroxyalkyl;
L1 is C1-20 alkylene and —CH2— of the alkylene may be replaced with —O—, —NR″—, or a combination thereof in which R″ is hydrogen or C1-7 alkyl;
a is an integer selected from 0 to 10; and
b is an integer selected from 1 to 3.