US 11,939,212 B2
MEMS device, manufacturing method of the same, and integrated MEMS module using the same
Heng-Chung Chang, Taichung (TW); Jhih-Jie Huang, Hsinchu County (TW); Chih-Ya Tsai, Taichung (TW); and Jing-Yuan Lin, New Taipei (TW)
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed by Industrial Technology Research Institute, Hsinchu (TW)
Filed on Aug. 25, 2021, as Appl. No. 17/412,160.
Application 17/412,160 is a continuation in part of application No. 16/726,025, filed on Dec. 23, 2019, granted, now 11,365,117.
Claims priority of application No. 109145665 (TW), filed on Dec. 23, 2020.
Prior Publication US 2021/0380404 A1, Dec. 9, 2021
Int. Cl. B81C 1/00 (2006.01)
CPC B81C 1/00015 (2013.01) [B81C 1/00476 (2013.01); B81C 1/00531 (2013.01); B81C 1/00539 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/0198 (2013.01); B81C 2203/0172 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A manufacturing method of a MEMS device, comprising:
providing a substrate having at least one contact;
forming a first dielectric layer on the substrate, wherein the first dielectric layer has at least one through hole exposing a portion of a top surface of the contact;
forming at least one first metal layer on the first dielectric layer, wherein at least a portion of the first metal layer is electrically connected to the contact;
forming a second dielectric layer on the first dielectric layer and the first metal layer;
forming a sacrificial layer on the second dielectric layer;
forming a structure layer on the second dielectric layer and the sacrificial layer;
removing a portion of the structure layer to form a first opening, wherein the first opening exposes a portion of a top surface of the sacrificial layer;
removing a portion of the sacrificial layer through the first opening to form a second opening, wherein the second opening exposes a portion of a top surface of the second dielectric layer;
removing a portion of the second dielectric layer through the second opening to form a recess structure, wherein a cross-sectional area at a bottom of the first opening is smaller than a cross-sectional area at a top of the recess structure;
removing the sacrificial layer; and
forming a sealing layer, wherein at least a portion of the sealing layer is formed in the second opening and the recess structure, and the second dielectric layer, the structure layer, and the sealing layer define a chamber.