US 12,262,650 B1
Temperature sensing and computing device and array based on TaOx electronic memristor
Xiaomin Cheng, Hubei (CN); Lijuan Cao, Hubei (CN); Yunhao Luo, Hubei (CN); Jiaqi Li, Hubei (CN); and Xiangshui Miao, Hubei (CN)
Assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Filed by HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Filed on Jul. 1, 2024, as Appl. No. 18/760,041.
Application 18/760,041 is a continuation of application No. PCT/CN2023/130398, filed on Nov. 8, 2023.
Claims priority of application No. 202311272095.8 (CN), filed on Sep. 27, 2023.
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/861 (2023.02) [H10B 63/80 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A temperature sensing and computing device based on TaOx electronic memristor, comprising a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top, wherein
a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer, the function layer is made of TaOx material;
the first metal layer and the second metal layer serve as electrodes, in response to the first metal layer being configured for grounding and the second metal layer being configured for applying positive and negative voltages, an output current of the negative voltage being applied to the second metal layer is greater than an output current of the positive voltage of same magnitude being applied to the second metal layer, and there is a self-rectifying effect; in response to the voltage of the same magnitude being applied to the second metal layer, the output current increases as a temperature increases,
wherein x=2.085.