US 12,262,649 B2
Phase-change memory
Philippe Boivin, Venelles (FR)
Assigned to STMICROELECTRONICS (ROUSSET) SAS, Rousset (FR)
Filed by STMICROELECTRONICS (ROUSSET) SAS, Rousset (FR)
Filed on Oct. 22, 2021, as Appl. No. 17/508,754.
Claims priority of application No. 2011088 (FR), filed on Oct. 29, 2020.
Prior Publication US 2022/0140233 A1, May 5, 2022
Int. Cl. H10N 70/20 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/882 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
phase-change memory cells, each phase-change memory cell of the phase-change memory cells including:
a first metallization level on a first side of each phase-change memory cell;
a second metallization level on a second side of each phase-change memory cell opposite the first side along a first direction;
a first element of a conductive material on the first metallization level, the first element having a first portion extending along the first direction and a second portion extending along a second direction transverse to the first direction; and
a second element of a phase-change material extending along the second direction and coupled to the first portion of the first element, the second element being entirely separated from the first metallization level and the second metallization level.