US 12,262,648 B2
Magnetic memory device
Byongguk Park, Daejeon (KR); Jeong-Heon Park, Hwaseong-si (KR); Kyung-Jin Lee, Daejeon (KR); and Jeongchun Ryu, Daejeon (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 19, 2022, as Appl. No. 17/723,845.
Claims priority of application No. 10-2021-0103321 (KR), filed on Aug. 5, 2021.
Prior Publication US 2023/0040502 A1, Feb. 9, 2023
Int. Cl. H01F 10/32 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01); H10N 52/01 (2023.01)
CPC H10N 52/80 (2023.02) [G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H10B 61/22 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising:
a conductive line extending in a first direction;
a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns; and
a magnetic layer on a second surface of the conductive line, which is opposite to the first surface,
wherein the magnetic layer includes magnetization components that have a magnetization in a direction which is parallel to the second surface and intersects the first direction, and
wherein a length of the conductive line in the first direction is greater than a length of the barrier pattern in the first direction.