US 12,262,647 B2
Semiconductor device and method for fabricating the same
Hui-Lin Wang, Taipei (TW); Chen-Yi Weng, New Taipei (TW); Yi-Wei Tseng, New Taipei (TW); Chin-Yang Hsieh, Tainan (TW); Jing-Yin Jhang, Tainan (TW); Yi-Hui Lee, Taipei (TW); Ying-Cheng Liu, Tainan (TW); Yi-An Shih, Changhua County (TW); I-Ming Tseng, Kaohsiung (TW); and Yu-Ping Wang, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 1, 2024, as Appl. No. 18/592,553.
Application 17/308,057 is a division of application No. 16/438,480, filed on Jun. 12, 2019, granted, now 11,063,206, issued on Jul. 13, 2021.
Application 18/592,553 is a continuation of application No. 17/967,904, filed on Oct. 18, 2022, granted, now 11,957,064.
Application 17/967,904 is a continuation of application No. 17/308,057, filed on May 5, 2021, granted, now 11,508,904, issued on Nov. 22, 2022.
Claims priority of application No. 201910418706.2 (CN), filed on May 20, 2019.
Prior Publication US 2024/0260481 A1, Aug. 1, 2024
Int. Cl. H10N 50/80 (2023.01); G11C 5/06 (2006.01); G11C 11/16 (2006.01); H01L 29/82 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10B 61/00 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 5/06 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01L 29/82 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); G11C 2211/5615 (2013.01); H10B 61/00 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a magnetic tunneling junction (MTJ) on a substrate, wherein a top surface of the MTJ comprises a reverse V-shape;
a spacer adjacent to and directly contacting the MTJ;
a liner adjacent to the spacer; and
a first metal interconnection on the MTJ, wherein the first metal interconnection comprises protrusions adjacent to two sides of the MTJ, a bottom surface of the protrusions contact the liner directly, and a width of the spacer directly contacting the protrusions is less than a width of the liner directly contacting the protrusions.