US 12,262,642 B2
Method of fabricating magneto-resistive random access memory (MRAM)
Chang-Lin Yang, Hsinchu (TW); Chung-Te Lin, Hsinchu (TW); Sheng-Yuan Chang, Hsinchu (TW); Han-Ting Lin, Hsinchu (TW); and Chien-Hua Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 17, 2023, as Appl. No. 18/512,515.
Application 18/512,515 is a continuation of application No. 17/231,320, filed on Apr. 15, 2021, granted, now 11,849,644.
Prior Publication US 2024/0090336 A1, Mar. 14, 2024
Int. Cl. H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H10B 61/00 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating magnetoresistive random-access memory (MRAM) cells on a substrate that is formed with a magnetic tunneling junction (MTJ) layer thereon, said method comprising:
etching the MTJ layer to form a plurality of MRAM cells, wherein metal components are deposited on a surface of the MRAM cells and between the MRAM cells during the etching of the MTJ layer;
using a gas that reacts with the metal components to remove the metal components by chemical reaction, wherein extra substances are formed during the removal of the metal components and include chemical compounds that result from chemical reactions between the MTJ layer and the gas; and
removing the extra substances from the surface of the MRAM cells.