US 12,262,641 B2
Magnetic memory device and method of fabricating the same
Kyungil Hong, Suwon-si (KR); Jungmin Lee, Gwangmyeong-si (KR); Younghyun Kim, Seoul (KR); Junghwan Park, Seoul (KR); Heeju Shin, Seoul (KR); and Se Chung Oh, Yongin-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 3, 2021, as Appl. No. 17/466,246.
Claims priority of application No. 10-2021-0016971 (KR), filed on Feb. 5, 2021.
Prior Publication US 2022/0254994 A1, Aug. 11, 2022
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method of fabricating a magnetic memory device, the method comprising:
forming a data storage structure on a substrate, wherein forming the data storage structure includes sequentially forming a bottom electrode, a magnetic tunnel junction pattern, and a top electrode on the substrate;
forming a first capping dielectric layer that conformally covers a lateral surface and a top surface of the data storage structure; and
forming a second capping dielectric layer on the first capping dielectric layer,
wherein forming the first capping dielectric layer is performed based on a first plasma-enhanced chemical vapor deposition (PECVD) process in which a first source gas, a first reaction gas, and a first purging gas are supplied into a first chamber in which the data storage structure and the substrate are located,
wherein forming the second capping dielectric layer is performed based on a second plasma-enhanced chemical vapor deposition (PECVD) process in which a second source gas, a second reaction gas, and a second purging gas are supplied into a second chamber in which the first capping dielectric layer, the data storage structure and the substrate are located,
wherein the first and second reaction gases are different from each other, and
wherein the first and second purging gases are different from each other.