US 12,262,627 B2
N-doped electrically conductive organic materials
Peter Kian-Hoon Ho, Singapore (SG); Lay-Lay Chua, Singapore (SG); Rui-Qi Png, Singapore (SG); and Cindy Guan-Yu Tang, Singapore (SG)
Assigned to National University of Singapore, Singapore (SG)
Appl. No. 17/416,390
Filed by National University of Singapore, Singapore (SG)
PCT Filed Dec. 21, 2018, PCT No. PCT/SG2018/050626
§ 371(c)(1), (2) Date Jun. 18, 2021,
PCT Pub. No. WO2020/130934, PCT Pub. Date Jun. 25, 2020.
Prior Publication US 2022/0059769 A1, Feb. 24, 2022
Int. Cl. H10K 85/10 (2023.01); H10K 50/11 (2023.01); H10K 71/12 (2023.01); H10K 71/30 (2023.01)
CPC H10K 85/151 (2023.02) [H10K 71/12 (2023.02); H10K 71/30 (2023.02); H10K 85/113 (2023.02); H10K 85/114 (2023.02); H10K 50/11 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A composition comprising:
an organic semiconductor comprising one or more aromatic or heteroaromatic moieties;
one or more cations covalently bonded to the organic semiconductor, or to a second material; and
at least one anion donor selected from a class of divalent and higher valent anions, the anion donor having an electron detachment energy which is less than zero in a gas phase,
wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV,
wherein the anion donor n-dopes the composition to form an n-doped organic semiconductor having a work function between 1.5 eV and 4.8 eV.