US 12,262,573 B2
Photoelectric conversion element and solid-state imaging device
Yuta Hasegawa, Kanagawa (JP); Nobuyuki Matsuzawa, Tokyo (JP); Yoshiaki Obana, Kanagawa (JP); Ichiro Takemura, Kanagawa (JP); Norikazu Nakayama, Kanagawa (JP); Masami Shimokawa, Kanagawa (JP); Tetsuji Yamaguchi, Kanagawa (JP); Iwao Yagi, Kanagawa (JP); and Hideaki Mogi, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on May 23, 2023, as Appl. No. 18/201,134.
Application 18/201,134 is a continuation of application No. 17/338,373, filed on Jun. 3, 2021, granted, now 11,700,733.
Application 17/338,373 is a continuation of application No. 16/503,150, filed on Jul. 3, 2019, granted, now 11,056,539, issued on Jul. 6, 2021.
Application 16/503,150 is a continuation of application No. 15/575,086, granted, now 10,374,015, issued on Aug. 6, 2019, previously published as PCT/JP2016/064887, filed on May 19, 2016.
Claims priority of application No. 2015-110900 (JP), filed on May 29, 2015; and application No. 2016-072197 (JP), filed on Mar. 31, 2016.
Prior Publication US 2023/0309331 A1, Sep. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 39/32 (2023.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01); H10K 19/20 (2023.01); H10K 30/30 (2023.01); H10K 71/16 (2023.01); H10K 85/60 (2023.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01)
CPC H10K 39/32 (2023.02) [H01L 27/146 (2013.01); H01L 31/10 (2013.01); H10K 19/20 (2023.02); H10K 30/353 (2023.02); H10K 71/164 (2023.02); H10K 85/631 (2023.02); H01L 27/14647 (2013.01); H01L 27/14689 (2013.01); H10K 30/30 (2023.02); H10K 85/211 (2023.02); H10K 85/215 (2023.02); H10K 85/322 (2023.02); H10K 85/622 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02); H10K 85/6576 (2023.02); Y02E 10/549 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first electrode and a second electrode facing each other; and
a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another,
wherein the first organic semiconductor material is fullerene,
wherein the second organic semiconductor material formed as a single-layer film has a linear absorption coefficient of a maximal light absorption wavelength in a visible light region higher than a linear absorption coefficient of a maximal light absorption wavelength in the visible light region of a single-layer film of the first organic semiconductor material and a linear absorption coefficient of a maximal light absorption wavelength in the visible light region of a single-layer film of the third organic semiconductor material,
wherein the third organic semiconductor material is a hole-transporting material, and
wherein the linear absorption coefficient of the maximal light absorption wavelength in the visible light region of the second organic semiconductor material is more than ten times a linear absorption coefficient of a wavelength with 450 nm of the second organic semiconductor material.