	US 12,262,572 B2
	Imaging element, stacked imaging element, and solid-state imaging device
Toshiki Moriwaki, Tokyo (JP); Yuusuke Yamazaki, Tokyo (JP); and Hiroshi Nakano, Tokyo (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Appl. No. 17/624,293
Filed by Sony Group Corporation, Tokyo (JP)
PCT Filed May 6, 2020, PCT No. PCT/JP2020/018477 § 371(c)(1), (2) Date Dec. 31, 2021, PCT Pub. No. WO2021/002090, PCT Pub. Date Jan. 7, 2021.
Claims priority of application No. 2019-123549 (JP), filed on Jul. 2, 2019.
Prior Publication US 2022/0367572 A1, Nov. 17, 2022
Int. Cl. H10K 39/32 (2023.01)

CPC H10K 39/32 (2023.02)

15 Claims

1. An imaging element comprising a photoelectric conversion section including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked,

wherein a protection layer including an inorganic oxide, and an inorganic oxide semiconductor material layer are formed from side of the photoelectric conversion section directly below the photoelectric conversion layer,

wherein the protection layer includes NbaTibO_c(where a+b+c=1.00), and

wherein 0.05≤a≤0.25 and 0.05≤b≤0.25 are satisfied.