US 12,262,564 B2
Image sensor
Cheng-Yu Hsieh, Singapore (SG)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 28, 2024, as Appl. No. 18/676,451.
Application 18/676,451 is a continuation of application No. 17/333,040, filed on May 28, 2021, granted, now 12,027,555.
Claims priority of application No. 202110504117.3 (CN), filed on May 10, 2021.
Prior Publication US 2024/0313020 A1, Sep. 19, 2024
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/182 (2025.01); H10F 39/184 (2025.01); H10F 39/8033 (2025.01); H10F 39/8053 (2025.01); H10F 39/8067 (2025.01); H10F 39/811 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface in a vertical direction;
a first isolation structure disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate;
at least one visible light detection structure disposed in the semiconductor substrate; and
at least one infrared light detection structure disposed in the semiconductor substrate, wherein the at least one visible light detection structure and the at least one infrared light detection structure are disposed within one of the pixel regions, and a first portion of the at least one visible light detection structure is disposed between the at least one infrared light detection structure and the second surface of the semiconductor substrate in the vertical direction, wherein the at least one infrared light detection structure comprises an epitaxial structure disposed in the semiconductor substrate, and the at least one visible light detection structure comprises a doped region comprising a material identical to a material of the semiconductor substrate.