US 12,262,562 B2
Image sensor with varying depth deep trench isolation structure for reduced crosstalk
Seong Yeol Mun, Santa Clara, CA (US)
Assigned to OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed by OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed on Aug. 31, 2021, as Appl. No. 17/463,222.
Prior Publication US 2023/0067975 A1, Mar. 2, 2023
Int. Cl. H10F 39/18 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 39/18 (2025.01) [H10F 39/014 (2025.01); H10F 39/199 (2025.01); H10F 39/807 (2025.01)] 16 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a first photodiode and a second photodiode, each disposed within a semiconductor substrate, and wherein the first photodiode is adjacent to the second photodiode; and
a deep trench isolation (DTI) structure with a varying depth disposed within the semiconductor substrate between the first photodiode and the second photodiode, wherein the DTI structure extends the varying depth from a first side of the semiconductor substrate towards a second side of the semiconductor substrate, wherein the second side of the semiconductor substrate is opposite to the first side;
wherein the DTI structure includes a first segment and a second segment adjacent to the first segment, wherein the varying depth includes a first depth of the first segment and a second depth of the second segment, wherein the first depth is greater than the second depth, wherein a first separation distance between the first photodiode and the second photodiode that extends through the first segment is less than a second separation distance between the first photodiode and the second photodiode that extends through the second segment.