US 12,262,555 B2
Semiconductor device and method of fabricating the same
Jia-He Lin, New Taipei (TW); Yu-Ruei Chen, New Taipei (TW); and Yu-Hsiang Lin, New Taipei (TW)
Assigned to United Microelectronics Corp., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on May 18, 2022, as Appl. No. 17/746,964.
Claims priority of application No. 111113532 (TW), filed on Apr. 8, 2022.
Prior Publication US 2023/0326997 A1, Oct. 12, 2023
Int. Cl. H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01)
CPC H10D 64/017 (2025.01) [H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/106 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate, comprising:
a first region, including:
a plurality of first planar active regions; and
a nonactive region between or around the plurality of first planar active regions, wherein the nonactive region comprises a second planar active region; and
a second region comprising a fin active region;
a plurality of planar transistors located on the plurality of first planar active regions in the first region;
a fin-type field effect transistor on the fin active region in the second region; and
a first nonactive structure located in the nonactive region between the plurality of planar transistors.