US 12,262,551 B2
Method of manufacturing semiconductor structure
Ting-Cih Kang, New Taipei (TW); and Hsih-Yang Chiu, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipel (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 21, 2024, as Appl. No. 18/611,718.
Application 17/643,417 is a division of application No. 16/930,328, filed on Jul. 16, 2020, granted, now 11,456,353, issued on Sep. 27, 2022.
Application 18/611,718 is a continuation of application No. 17/643,417, filed on Dec. 9, 2021, granted, now 11,967,612.
Prior Publication US 2024/0234497 A1, Jul. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H01L 21/02 (2006.01); H10D 62/10 (2025.01); H10D 64/68 (2025.01)
CPC H10D 62/115 (2025.01) [H01L 21/02008 (2013.01); H10D 64/691 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
providing a first semiconductor wafer, wherein the first semiconductor wafer comprises a first dielectric layer and at least one first top metallization structure embedded in the first dielectric layer, and a top surface of the first dielectric layer is higher than a top surface of the first top metallization structure by a first distance, wherein providing the first semiconductor wafer comprises:
recessing the first top metallization structure to fall below the top surface of the first dielectric layer;
providing a second semiconductor wafer, wherein the second semiconductor wafer comprises a second dielectric layer and at least one second top metallization structure embedded in the second dielectric layer, and a top surface of the second top metallization structure is higher than a top surface of the second dielectric layer by a second distance; and
hybrid-bonding the first semiconductor wafer and the second semiconductor wafer,
wherein providing the first semiconductor wafer further comprises forming an etch stop layer vertically on the second dielectric layer, wherein a thickness of the etch stop layer is substantially equal to the second distance.