US 12,262,549 B2
Transistor device having a comb-shaped channel region to increase the effective gate width
Kangguo Cheng, Schenectady, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Aug. 25, 2021, as Appl. No. 17/411,697.
Application 17/411,697 is a division of application No. 16/397,723, filed on Apr. 29, 2019, granted, now 11,145,743.
Prior Publication US 2021/0384320 A1, Dec. 9, 2021
Int. Cl. H10D 30/67 (2025.01); H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01)
CPC H10D 30/6735 (2025.01) [H10D 30/014 (2025.01); H10D 30/019 (2025.01); H10D 30/023 (2025.01); H10D 30/024 (2025.01); H10D 30/501 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 64/516 (2025.01); H10D 84/834 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A field effect transistor device with a comb-like channel structure, comprising:
a first channel sidewall on an insulating layer, the first channel sidewall including a planar outer surface, the first channel sidewall connecting a source region to a drain region;
a plurality of first channel plates in physical and electrical contact with a sidewall surface of the first channel sidewall, wherein the first channel plates extends laterally from a side face of the first channel sidewall that is opposite the planar outer surface in a direction perpendicular to a direction separating the source region from the drain region, and the first channel sidewall extends above an uppermost first channel plate to provide an apex, the first channel sidewall contacting the insulating layer opposite the apex;
a gate dielectric layer on a portion of the plurality of channel plates and the channel sidewall; and
a conductive gate electrode on the gate dielectric layer.