US 12,262,546 B2
Semiconductor device and three-phase inverter comprising the same
NackYong Joo, Suwon-si (KR); Dae Hwan Chun, Suwon-si (KR); Jungyeop Hong, Seoul (KR); Youngkyun Jung, Seoul (KR); and Junghee Park, Suwon-si (KR)
Assigned to HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed by HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed on Jun. 8, 2022, as Appl. No. 17/835,367.
Claims priority of application No. 10-2022-0014113 (KR), filed on Feb. 3, 2022.
Prior Publication US 2023/0246095 A1, Aug. 3, 2023
Int. Cl. H10D 12/00 (2025.01); H02M 1/088 (2006.01); H02M 7/537 (2006.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01)
CPC H10D 12/481 (2025.01) [H02M 1/088 (2013.01); H02M 7/537 (2013.01); H10D 62/393 (2025.01); H10D 64/231 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a plurality of gate electrodes positioned on an upper surface portion of the semiconductor substrate and spaced apart from each other;
a plurality of emitter electrodes positioned overlapping with each of the plurality of gate electrodes; and
a collector electrode positioned on a lower surface of the semiconductor substrate.