US 12,262,544 B2
Magnetoresistive random access memory and method for fabricating the same
Hung-Chan Lin, Tainan (TW); and Yu-Ping Wang, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 4, 2024, as Appl. No. 18/595,363.
Application 18/595,363 is a division of application No. 17/369,917, filed on Jul. 7, 2021, granted, now 11,956,973.
Claims priority of application No. 202110613576.5 (CN), filed on Jun. 2, 2021.
Prior Publication US 2024/0206192 A1, Jun. 20, 2024
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/22 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a magnetic tunneling junction (MTJ) on a substrate;
forming a first spin orbit torque (SOT) layer on the MTJ;
forming a passivation layer around the MTJ;
forming a second SOT layer on the first SOT layer and the passivation layer; and
patterning the second SOT layer and the passivation layer.