US 12,262,539 B2
3D NAND memory device and method of forming the same
Yali Song, Hubei (CN); Li Hong Xiao, Hubei (CN); and Ming Wang, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Nov. 13, 2023, as Appl. No. 18/507,574.
Application 17/154,105 is a division of application No. 16/365,725, filed on Mar. 27, 2019, granted, now 10,950,623, issued on Mar. 16, 2021.
Application 18/507,574 is a continuation of application No. 18/468,801, filed on Sep. 18, 2023, abandoned.
Application 18/468,801 is a continuation of application No. 17/854,648, filed on Jun. 30, 2022, granted, now 11,825,656.
Application 17/854,648 is a continuation of application No. 17/154,105, filed on Jan. 21, 2021, granted, now 11,404,441, issued on Aug. 2, 2022.
Application 16/365,725 is a continuation of application No. PCT/CN2018/119908, filed on Dec. 7, 2018.
Prior Publication US 2024/0090223 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/27 (2023.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [G11C 16/0483 (2013.01); G11C 16/14 (2013.01); H01L 21/31116 (2013.01); H01L 23/528 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H01L 21/0276 (2013.01); H01L 21/31144 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a bottom select gate (BSG);
a word line positioned over the BSG with a staircase configuration;
a top select gate (TSG) positioned over the word line;
an insulating layer disposed between the BSG, the word line, and the TSG;
a first dielectric trench formed in the BSG and separate the BSG into a plurality of sub-BSGs; and
a second dielectric trench formed in the TSG and separating the TSG into a plurality of sub-TSGs; wherein:
the first dielectric trench and the second dielectric trench are aligned with each other in a height direction of the insulating layer and are spaced apart by the word line.