US 12,262,532 B2
Microelectronic devices and electronic systems
Fatma Arzum Simsek-Ege, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 31, 2024, as Appl. No. 18/429,004.
Application 18/429,004 is a division of application No. 17/364,379, filed on Jun. 30, 2021, granted, now 11,930,634.
Prior Publication US 2024/0172425 A1, May 23, 2024
Int. Cl. H10B 12/00 (2023.01); H01L 25/065 (2023.01); H10B 80/00 (2023.01)
CPC H10B 12/485 (2023.02) [H01L 25/0657 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10B 12/50 (2023.02); H10B 80/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
array regions individually comprising:
memory cells comprising access devices and storage node devices;
digit lines coupled to the access devices and extending in a first direction;
word lines coupled to the access devices and extending in a second direction orthogonal to the first direction; and
control logic devices over and in electrical communication with the memory cells;
digit line exit regions horizontally alternating with the array regions in the first direction and individually comprising:
portions of the digit lines extending beyond the array regions adjacent thereto; and
digit line contact structures individually continuously vertically extending from the portions of the digit lines to routing structures vertically overlying transistors of the control logic devices; and
word line exit regions horizontally alternating with the array regions in the second direction and individually comprising:
portions of the word lines extending beyond the array regions adjacent thereto;
conductive contact structures on the portions of the word lines; and
word line contact structures individually continuously vertically extending from the conductive contact structures to the routing structures vertically overlying the transistors of the control logic devices.