US 12,262,522 B2
Method for fabricating semiconductor structure, semiconductor structure, and memory
Shuai Guo, Hefei (CN); and Mingguang Zuo, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 16, 2022, as Appl. No. 17/841,681.
Application 17/841,681 is a continuation of application No. PCT/CN2022/088294, filed on Apr. 21, 2022.
Claims priority of application No. 202210178852.4 (CN), filed on Feb. 25, 2022.
Prior Publication US 2023/0276609 A1, Aug. 31, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/01 (2023.02) 15 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor structure, comprising
providing a substrate, a thin-film stack structure being formed on the substrate;
forming a first groove and a second groove in the thin-film stack structure, and forming write transistors in the first groove, the second groove extending along a first direction, and the second groove being positioned between adjacent two of the write transistors in a second direction;
removing a part of the thin-film stack structure by etching using the second groove to form a first hole and a second hole respectively, forming a write word line in the first hole, and forming a write bit line in the second hole;
forming a first via on an upper surface of the thin-film stack structure, the write transistor being exposed to a bottom of the first via, and forming a storage node in the first via;
forming a read transistor over the thin-film stack structure; and
forming a read bit line and a lead over the read transistor to obtain the semiconductor structure.