US 12,262,460 B2
Fast annealing equipment
Chwung-Shan Kou, Hsinchu County (TW)
Assigned to HIGHLIGHT TECH CORP., Tainan (TW); and Finese Technology Co., Ltd., Hsinchu County (TW)
Filed by HIGHLIGHT TECH CORP., Tainan (TW); and Finesse Technology Co., Ltd., Hsinchu County (TW)
Filed on Mar. 11, 2022, as Appl. No. 17/692,221.
Claims priority of application No. 110149586 (TW), filed on Dec. 30, 2021.
Prior Publication US 2023/0217558 A1, Jul. 6, 2023
Int. Cl. H05B 6/64 (2006.01); H01L 21/67 (2006.01); H05B 6/68 (2006.01); H05B 6/72 (2006.01); H05B 6/80 (2006.01)
CPC H05B 6/686 (2013.01) [H05B 6/72 (2013.01); H05B 6/80 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A fast annealing equipment comprising:
a variable frequency microwave power source system using a solid state variable frequency microwave power source to provide a microwave with a first frequency;
a resonant chamber heating system comprising a resonant chamber having a wafer carrier base and an antenna, wherein a material to be annealed is placed inside an accommodating chamber of the wafer carrier base, the microwave provided by the variable frequency microwave power source system is introduced into the resonant chamber through the antenna and excites a resonant mode in the resonant chamber to perform an annealing process on the material to be annealed, wherein during the annealing process, the wafer carrier base, which comprises a seat and an upper cover forming the accommodating chamber, is made of a microwave absorbing material that absorbs a portion of the microwave to generate a heat and conducts the heat uniformly onto the material to be annealed, which is placed inside the accommodating chamber of the wafer carrier base, by conduction, and the wafer carrier base enables another portion of the microwave to penetrate therethrough and directly heat the material to be annealed in the accommodating chamber of the wafer carrier base, wherein the wafer carrier base covers the material to be annealed, and the upper cover covers the accommodating chamber, inside which the material to be annealed is placed; and
a measurement and control system comprising a directional coupler, a power meter, an optical pyrometer, a gas pressure control system and a computer, wherein during the annealing process, the gas pressure control system monitors and controls a gas pressure value of the resonant chamber, the directional coupler detects a forward signal of the microwave provided by the variable frequency microwave power source system and a reflected signal from the resonant chamber heating system, the power meter obtains a power variation according to the forward signal and the reflected signal, the optical pyrometer monitors a temperature value of the material to be annealed, the computer generates an adjustment command correspondingly according to the temperature value and the power variation, the variable frequency microwave power source system performs a frequency sweep mode according to the adjustment command, so as to thereby instantaneously select an optimum operating microwave frequency with a lowest microwave reflection that compensates for resonant frequency changes of the resonant chamber caused by temperature changes in the material to be annealed by replacing the first frequency with the optimum operating microwave frequency.