US 12,262,454 B2
Nitride-based multi-wavelength light emitting diode system and control method thereof
Sung-Nam Lee, Incheon (KR); and Gun Woo Lee, Seoul (KR)
Assigned to TECH UNIVERSITY OF KOREA Industry Academic Cooperation Foundation, Gyeonggi-do (KR)
Filed by TECH UNIVERSITY OF KOREA Industry Academic Cooperation Foundation, Gyeonggi-do (KR)
Filed on Aug. 18, 2022, as Appl. No. 17/890,473.
Claims priority of application No. 10-2021-0190381 (KR), filed on Dec. 28, 2021.
Prior Publication US 2023/0209676 A1, Jun. 29, 2023
Int. Cl. H05B 45/10 (2020.01); H05B 45/20 (2020.01); H05B 45/325 (2020.01); H05B 47/10 (2020.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)
CPC H05B 45/325 (2020.01) [H05B 45/20 (2020.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A light emitting diode system, comprising:
a nitride-based multi-wavelength light emitting diode including a first semiconductor layer doped with an n-type material, a second semiconductor layer doped with a p-type material, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and having a structure of an indium gallium nitride (InGaN)-based quantum well, wherein the active layer has different In composition for each position according to a crystal growth plane; and
a control unit configured to adjust and apply at least one of a pulse width and a duty cycle of an injection current, while maintaining the same intensity of the injection current to the nitride-based multi-wavelength light emitting diode so that wavelength variation occurs by filling energy band gaps of different sizes formed according to the different In composition in the active layer and the nitride-based multi-wavelength light emitting diode,
wherein the control unit configured to apply two or more injection currents having different pulse widths and duty cycles so that the nitride-based multi-wavelength light emitting diode emits light of two or more wavelengths to realize a full-color display.