| CPC H04N 25/59 (2023.01) [H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14831 (2013.01); H04N 25/75 (2023.01); H04N 25/772 (2023.01); H04N 25/79 (2023.01)] | 20 Claims |
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1. A solid-state imaging device, comprising:
a photoelectric conversion section;
a first signal path including a first floating diffusion, a first amplification transistor, and a first selection transistor;
a second signal path including a second floating diffusion, a second amplification transistor, and a second selection transistor;
a mode-switching switch section that, in a first mode, electrically couples the first signal path to the photoelectric conversion section and electrically decouples the second signal path from the photoelectric conversion section, and that, in a second mode, electrically couples both of the first signal path and the second signal path to the photoelectric conversion section;
a first substrate in which the photoelectric conversion section is formed; and
a second substrate which is stacked on the first substrate, and in which the first floating diffusion, the first amplification transistor, the second floating diffusion, the second amplification transistor and the mode-switching switch section are formed,
wherein from a plan view, a length of the first amplification transistor is equal to a length of the second amplification transistor and a width of the second amplification transistor is at least twice a width of the first amplification transistor, and
wherein from the plan view, a length of the first selection transistor is equal to a length of the second selection transistor and a width of the second selection transistor is at least twice a width of the first selection transistor.
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