US 12,261,595 B2
Semiconductor device
Kenichi Onodera, Kyoto (JP); and Masashi Hayashiguchi, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Sep. 18, 2023, as Appl. No. 18/469,301.
Application 18/469,301 is a continuation of application No. PCT/JP2022/018652, filed on Apr. 25, 2022.
Claims priority of application No. 2021-079550 (JP), filed on May 10, 2021.
Prior Publication US 2024/0007097 A1, Jan. 4, 2024
Int. Cl. H03K 17/12 (2006.01); H02M 1/08 (2006.01)
CPC H03K 17/127 (2013.01) [H02M 1/08 (2013.01); H03K 17/122 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a switching circuit that switches between a conducting state and a disconnected state, wherein
the switching circuit includes a first switching element and a second switching element that are electrically connected in parallel,
the first switching element is an IGBT,
the second switching element is a MOSFET,
when a current flowing in the switching circuit is less than a first current value, the second switching element has a lower voltage than the first switching element,
when current flowing in the switching circuit is equal to or greater than a second current value and equal to or less than a third current value, a threshold voltage of the second switching element is in a range from −1.0 V to +0.4 V, inclusive, relative to a threshold voltage of the first switching element,
the third current value is equal to or less than a rated current of the switching circuit, and
the first current value is less than the third current value.