US 12,261,594 B2
Cascode diode circuit
Fu-Jen Hsu, Hsinchu (TW); Cheng-Tyng Yen, Hsinchu (TW); and Hsiang-Ting Hung, Hsinchu (TW)
Assigned to FAST SIC SEMICONDUCTOR INCORPORATED, Hsinchu (TW)
Filed by Fast SiC Semiconductor Incorporated, Hsinchu (TW)
Filed on Jun. 21, 2023, as Appl. No. 18/338,713.
Prior Publication US 2024/0429912 A1, Dec. 26, 2024
Int. Cl. H03K 17/10 (2006.01); H03K 17/0412 (2006.01); H03K 17/0812 (2006.01); H03K 17/12 (2006.01); H03K 17/74 (2006.01)
CPC H03K 17/10 (2013.01) [H03K 17/04123 (2013.01); H03K 17/08122 (2013.01); H03K 17/12 (2013.01); H03K 17/74 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A cascode diode circuit, comprising:
a normally on transistor, having a gate, a drain, and a source;
a low voltage diode, having a cathode connected to the source of the normally on transistor, and an anode connected to the gate of the normally on transistor; and
a high voltage diode, having an anode connected to a node between the normally on transistor and the low voltage diode, and a cathode connected to the drain of the normally on transistor;
wherein either a current rating or a voltage rating of the normally on transistor is equal to or smaller than which of the high voltage diode; and
wherein the current rating of the low voltage diode is equal to or smaller than that of the high voltage diode.