US 12,261,583 B2
Stacked acoustic wave (AW) filter packages, including cross-talk reduction layers, and related fabrication methods
Simone Colasanti, Bayern (DE); Nadine Erhard-Egeler, Munich (DE); Stefan Leopold Hatzl, Kloech (AT); Manuel Hofer, Graz (AT); Peter Kirchhofer, Munich (DE); and Volker Schulz, Munich (DE)
Assigned to RF360 Singapore Pte. Ltd., Singapore (SG)
Filed by RF360 Singapore Pte. Ltd., Singapore (SG)
Filed on Feb. 4, 2022, as Appl. No. 17/649,965.
Prior Publication US 2023/0253950 A1, Aug. 10, 2023
Int. Cl. H03H 9/02 (2006.01); H03H 3/08 (2006.01); H03H 9/10 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01)
CPC H03H 9/02913 (2013.01) [H03H 3/08 (2013.01); H03H 9/1071 (2013.01); H03H 9/1092 (2013.01); H03H 9/6489 (2013.01); H03H 9/725 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A stacked acoustic wave (AW) filter circuit, comprising:
a first substrate comprising a first AW filter circuit on a first surface;
a metal layer on a second surface of the first substrate;
a second substrate comprising a second AW filter circuit on a third surface, the second AW filter circuit disposed in a cavity between the metal layer on the first substrate and the third surface of the second substrate;
a metallization layer comprising at least one metal interconnect disposed on a side surface of the first substrate, the at least one metal interconnect coupled to the metal layer, and the second AW filter circuit; and
a portion of the metal layer extending onto the side surface of the first substrate between the at least one metal interconnect and the side surface of the first substrate.