US 12,261,576 B2
Receiver control circuit and terminal
Ting Huang, Shenzhen (CN); Chen Zhu, Shenzhen (CN); Yingqun Feng, Shenzhen (CN); and Yupeng Qiu, Shenzhen (CN)
Assigned to Honor Device Co., Ltd., Shenzhen (CN)
Appl. No. 17/779,360
Filed by Honor Device Co., Ltd., Shenzhen (CN)
PCT Filed Mar. 30, 2021, PCT No. PCT/CN2021/083930
§ 371(c)(1), (2) Date May 24, 2022,
PCT Pub. No. WO2021/218533, PCT Pub. Date Nov. 4, 2021.
Claims priority of application No. 202010367643.5 (CN), filed on Apr. 30, 2020.
Prior Publication US 2023/0045337 A1, Feb. 9, 2023
Int. Cl. H04B 1/16 (2006.01); G01S 15/04 (2006.01); H01L 29/78 (2006.01); H03F 1/30 (2006.01); H03F 3/193 (2006.01); H03F 3/345 (2006.01); H03F 3/72 (2006.01); H03K 19/0175 (2006.01); H04R 5/04 (2006.01)
CPC H03F 3/193 (2013.01) [G01S 15/04 (2013.01); H01L 29/783 (2013.01); H03F 1/301 (2013.01); H03F 3/345 (2013.01); H03F 3/72 (2013.01); H03K 19/017509 (2013.01); H04B 1/16 (2013.01); H04R 5/04 (2013.01); H01L 2924/13091 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A receiver control circuit, comprising:
a smart power amplifier;
a coder-decoder;
a receiver;
a first switch; and
a second switch,
wherein the smart power amplifier is electrically connected to the receiver by the first switch;
wherein the first switch comprises a first switch component;
wherein the first switch component is connected between the smart power amplifier and the receiver, the first switch component is configured to control continuity and cutoff between the smart power amplifier and the receiver, and the first switch component is formed by a first metal oxide semiconductor field-effect transistor (MOSFET);
wherein the first MOSFET of the first switch component is of N-type, a drain electrode of the first MOSFET is electrically connected to the smart power amplifier, and a source electrode of the first MOSFET is electrically connected to the receiver;
wherein the first switch further comprises a first follower circuit, wherein the first follower circuit is configured to keep an unchanged voltage difference between a gate electrode of the first MOSFET and the drain electrode of the first MOSFET, and wherein a gate electrode voltage of the first MOSFET is greater than a drain electrode voltage of the first MOSFET;
wherein the coder-decoder is electrically connected to the receiver by the second switch; and
wherein the second switch comprises a second switch component, wherein the second switch component is connected between the coder-decoder and the receiver, the second switch component is configured to control continuity and cutoff between the coder-decoder and the receiver, and the second switch component is formed by a second MOSFET, a source electrode of the second MOSFET of the second switch component is electrically connected to the coder-decoder, and a drain electrode of the second MOSFET is electrically connected to the receiver.