US 12,261,574 B2
24 to 30GHZ wide band CMOS power amplifier with turn-off mode high impedance
Che-Chun Kuo, San Jose, CA (US); Siu-Chuang Ivan Lu, San Jose, CA (US); Sang Won Son, Palo Alto, CA (US); and Xiaohua Yu, San Jose, CA (US)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 7, 2023, as Appl. No. 18/207,066.
Application 18/207,066 is a continuation of application No. 17/111,337, filed on Dec. 3, 2020, granted, now 11,689,162.
Claims priority of provisional application 63/068,651, filed on Aug. 21, 2020.
Prior Publication US 2023/0318539 A1, Oct. 5, 2023
Int. Cl. H03F 1/56 (2006.01); H03F 3/24 (2006.01); H04B 1/04 (2006.01)
CPC H03F 1/565 (2013.01) [H03F 3/245 (2013.01); H03F 2200/06 (2013.01); H03F 2200/165 (2013.01); H03F 2200/222 (2013.01); H04B 1/04 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A wide band matching network, comprising:
a power amplifier transistor connected to an output network;
the output network including:
a capacitor;
an on-chip transformer connected to the capacitor in series, wherein the on-chip transformer and the capacitor act as a second order filter; and
a port connected to the capacitor and a receiver switch, wherein the output network acts as impedance to prevent signal from entering the output network when the power amplifier transistor is off and the receiver switch is on.