US 12,261,570 B2
Mixer and semiconductor device
Kazuaki Ohshima, Atsugi (JP); Hitoshi Kunitake, Isehara (JP); and Tatsunori Inoue, Yamato (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/606,825
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed May 20, 2020, PCT No. PCT/IB2020/054751
§ 371(c)(1), (2) Date Oct. 27, 2021,
PCT Pub. No. WO2020/240348, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 2019-102341 (JP), filed on May 31, 2019; and application No. 2019-106983 (JP), filed on Jun. 7, 2019.
Prior Publication US 2022/0216830 A1, Jul. 7, 2022
Int. Cl. H04B 1/06 (2006.01); H01L 27/06 (2006.01); H01L 29/786 (2006.01); H03D 7/14 (2006.01); H04B 1/16 (2006.01); H03F 3/19 (2006.01)
CPC H03D 7/1425 (2013.01) [H01L 27/0688 (2013.01); H01L 29/7869 (2013.01); H04B 1/16 (2013.01); H03F 3/19 (2013.01); H03F 2200/294 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A mixer comprising a differential portion, a current source, a first load, an input terminal, and a first output terminal,
wherein the differential portion includes a first transistor and a second transistor,
wherein each of the first transistor and the second transistor includes a metal oxide in a channel formation region,
wherein a first terminal of the first transistor is electrically connected to a first terminal of the second transistor, the input terminal, and a first terminal of the current source,
wherein a second terminal of the first transistor is electrically connected to a first terminal of the first load and the first output terminal,
wherein the first load is configured to supply a current between the first terminal and a second terminal of the first load when a first voltage is supplied to the second terminal of the first load,
wherein the current source is configured to supply a constant current to a first terminal of the current source,
wherein when a first signal is input to a gate of the first transistor, a second signal with a phase difference of 180° from the first signal is input to a gate of the second transistor, and a third signal is input to the input terminal, the differential portion generates a first output signal with a voltage waveform based on a voltage waveform of the first signal and a voltage waveform of the third signal and outputs the first output signal to the first output terminal,
wherein the current source comprises a transistor including silicon in a channel formation region,
wherein an insulator is positioned above the channel formation region of the transistor, and
wherein the channel formation region of the each of the first transistor and the second transistor is positioned above the insulator.