US 12,261,431 B2
Electrostatic discharge (ESD) protection in radio frequency (RF) switch circuitry
Alp Oguz, Istanbul (TR); Turusan Kolcuoglu, Istanbul (TR); Celal Avci, Istanbul (TR); and Atilim Ergul, Istanbul (TR)
Assigned to Analog Devices International Unlimited Company, Limerick (IE)
Filed by Analog Devices International Unlimited Company, Limerick (IE)
Filed on Jul. 28, 2022, as Appl. No. 17/815,883.
Prior Publication US 2024/0039276 A1, Feb. 1, 2024
Int. Cl. H02H 9/04 (2006.01); H01L 27/02 (2006.01); H03K 17/693 (2006.01)
CPC H02H 9/046 (2013.01) [H01L 27/0266 (2013.01); H03K 17/693 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electrostatic discharge (ESD)-protected radio frequency (RF) switch circuitry, comprising:
a common port;
at least one terminal port;
a switch circuitry coupled between the common port and the at least one terminal port, wherein the switch circuitry comprises one or more transistors connected in a stacked configuration; and
a first ESD protection circuitry coupled between a gate of a first transistor of the one or more transistors and a driver circuitry for the first transistor, wherein the first ESD protection circuitry:
operates as an open circuit to electrically decouple the gate of the first transistor from the driver circuitry in response to an ESD pulse; and
electrically couples a control voltage from the driver circuitry to the gate of the first transistor outside of a time duration associated with the ESD pulse.