US 12,261,410 B2
Single-mode hybrid III-V on silicon laser of simplified construction
Sylvie Menezo, Grenoble (FR); Joyce Poon, Toronto (CA); and Torrey Thiessen, Toronto (CA)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Appl. No. 17/609,024
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
PCT Filed Apr. 24, 2020, PCT No. PCT/EP2020/061501
§ 371(c)(1), (2) Date Nov. 5, 2021,
PCT Pub. No. WO2020/224994, PCT Pub. Date Nov. 12, 2020.
Claims priority of application No. 1904842 (FR), filed on May 9, 2019.
Prior Publication US 2022/0216669 A1, Jul. 7, 2022
Int. Cl. H01S 5/02 (2006.01); H01S 5/0239 (2021.01); H01S 5/10 (2021.01); H01S 5/12 (2021.01); H01S 5/125 (2006.01)
CPC H01S 5/021 (2013.01) [H01S 5/0239 (2021.01); H01S 5/1032 (2013.01); H01S 5/12 (2013.01); H01S 5/125 (2013.01); H01S 5/1014 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A laser device comprising:
a III-V heterostructure amplifying medium;
a silicon optical waveguide which includes a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section arranged between the coupling section and the propagation section; and
a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium, wherein
the coupling section comprises a refractive index disturbance region provided with micro-reflectors configured by reducing one of a thickness and a width of the coupling section, the micro-reflectors having a length of

OG Complex Work Unit Math
and being separated from one another by a distance greater than

OG Complex Work Unit Math
where m is an odd integer, n is an integer, λm0 is a wavelength in vacuum and neff is an effective index of the refractive index disturbance region;
the first reflective structure is formed in a section of the waveguide which has a first thickness; and
the second reflective structure is formed in a section of the waveguide which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness greater than the first thickness.