US 12,261,409 B2
Edge-emitting semiconductor laser diode and method for producing a plurality of edge-emitting semiconductor laser diodes
Sven Gerhard, Alteglofsheim (DE); and Bernhard Stojetz, Wiesent (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMB, Regensburg (DE)
Appl. No. 17/441,868
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Mar. 11, 2020, PCT No. PCT/EP2020/056436
§ 371(c)(1), (2) Date Sep. 22, 2021,
PCT Pub. No. WO2020/193131, PCT Pub. Date Oct. 1, 2020.
Claims priority of application No. 10 2019 204 188.4 (DE), filed on Mar. 27, 2019.
Prior Publication US 2022/0200241 A1, Jun. 23, 2022
Int. Cl. H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/10 (2021.01); H01S 5/12 (2021.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/026 (2006.01)
CPC H01S 5/0207 (2013.01) [H01S 5/0014 (2013.01); H01S 5/1017 (2013.01); H01S 5/1082 (2013.01); H01S 5/12 (2013.01); H01S 5/2022 (2013.01); H01S 5/2027 (2013.01); H01S 5/22 (2013.01); H01S 5/0087 (2021.01); H01S 5/0201 (2013.01); H01S 5/026 (2013.01); H01S 2301/166 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An edge emitting semiconductor laser diode comprising:
a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
a first cutout extending from the bottom surface toward the top surface, wherein
a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
a filling material is arranged in the first cutout,
the filling material comprises a radiation-absorbing material or a radiation-reflecting material, and
the filling material is electrically insulating.