US 12,261,380 B2
Semiconductor element
Yasushi Koyama, Kanagawa (JP); and Noriyuki Kaifu, Tokyo (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by Canon Kabushiki Kaisha, Tokyo (JP)
Filed on Jan. 19, 2023, as Appl. No. 18/156,539.
Application 18/156,539 is a continuation of application No. PCT/JP2021/026676, filed on Jul. 15, 2021.
Claims priority of application No. 2020-126353 (JP), filed on Jul. 27, 2020.
Prior Publication US 2023/0155292 A1, May 18, 2023
Int. Cl. H01Q 9/04 (2006.01); H01Q 1/22 (2006.01); H01Q 21/00 (2006.01); H01Q 21/06 (2006.01); H01Q 23/00 (2006.01); H03B 7/08 (2006.01)
CPC H01Q 9/045 (2013.01) [H01Q 1/2283 (2013.01); H01Q 21/0075 (2013.01); H01Q 21/065 (2013.01); H01Q 23/00 (2013.01); H03B 7/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor element comprising:
an antenna array that is provided with a plurality of antennas each including a semiconductor layer having an electromagnetic wave gain or carrier nonlinearity with respect to a terahertz wave; and
a coupling line that synchronizes adjacent antennas in the antenna array with each other at a frequency of the terahertz wave,
wherein the coupling line includes a plurality of first regions connected to the adjacent antennas respectively and a second region provided between the plurality of first regions,
wherein the second region has impedance different from impedance of each of the first regions, and
wherein the second region has a loss larger than a loss of each individual first region at a frequency other than a resonance frequency of the antenna array.