| CPC H01M 4/625 (2013.01) [H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/483 (2013.01); H01M 4/622 (2013.01); H01M 4/623 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); H01M 2220/10 (2013.01); H01M 2220/20 (2013.01)] | 19 Claims |

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1. A negative electrode comprising a negative electrode active material layer,
wherein the negative electrode active material layer comprises a negative electrode active material and a conductive agent,
wherein the negative electrode active material comprises a silicon-based active material,
the silicon-based active material comprises SiOx(0≤x<2), and
the conductive agent comprises a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side in a single plane,
wherein the carbon nanotube structure has an average diameter of 10 nm to 100 nm.
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