| CPC H01L 33/62 (2013.01) [H01L 25/167 (2013.01); H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 33/46 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01)] | 20 Claims |
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1. An optoelectronic component comprising:
a semiconductor chip comprising a first electrical contact and a second electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation;
a carrier comprising a first electrically conductive coating and a second electrically conductive coating on which the semiconductor chip with the first and second electrical contacts is arranged;
a conversion element;
a contact agent respectively connecting the first and second electrically conductive coatings of the carrier and the first and second electrical contacts of the semiconductor chip with one another; and
a passivation layer arranged in places on the first and second electrically conductive coatings,
wherein an outer surface of the first and second electrically conductive coatings is completely encapsulated by the passivation layer and the contact agent,
wherein the passivation layer has a penetration,
wherein the contact agent protrudes beyond the penetration in a lateral direction,
wherein the lateral direction extends parallel to a main extension plane of the carrier,
wherein a metal layer is arranged in the penetration between the contact agent and the first and second electrically conductive coatings,
wherein the metal layer terminates flush with a main surface of the passivation layer,
wherein the conversion element is arranged on the semiconductor chip in an intermediate space between opposing side surfaces of the first and second electrically conductive coatings, the semiconductor chip and the carrier, and
wherein the semiconductor chip is a flip chip.
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